gaas spdt switch dc - 6.0 ghz rev. v6 masw6010g 1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? low insertion loss: 0. 5 db typical @ 4 ghz ? fast switching speed: 4 ns typical ? ultra low dc power consumption description m/a-com technology?s masw6010g is an spdt gaas mesfet mmic. this part combines small size, low insertion loss and power consumption with high isolation. ideal for many applications and module use. it will function well for designs below 6 ghz. this die includes full passivation for performance and reliability. bond pad dimensions bond pad dimension inches (mm) rfc 0.004 x 0.004 (0.100 x 0.100) rf2, rf3 0.004 x 0.004 (0.100 x 0.100) a, b 0.004 x 0.004 (0.100 x 0.100) gnd1, gnd2 0.012 x 0.004 (0.300 x 0.100) die size 0.031 x 0.031 x 0.010 (0.80 x 0.80 x 0.25) ordering information 1 part number package masw6010g die 1. die quantity varies. absolute maximum ratings 2 parameter absolute maximum control voltage (a/b) -8.5 vdc input rf power +34 dbm (500 mhz - 6 ghz) operating temperature +175c storage temperature -65c to +175c 2. exceeding any one or combination of these limits may cause permanent damage to this device . schematic pad layout
gaas spdt switch dc - 6.0 ghz rev. v6 masw6010g 2 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. electrical specifications 3,4 : t a = 25c, z 0 = 50 ? parameter test conditions units min. typ. max. insertion loss dc - 1.0 ghz dc - 2.0 ghz dc - 6.0 ghz db ? ? ? ? ? ? 0.6 0.8 1.4 isolation dc - 1.0 ghz dc - 2.0 ghz dc - 6.0 ghz db 45 38 22 ? ? ? ? ? ? vswr dc - 1.0 ghz dc - 2.0 ghz dc - 6.0 ghz ratio ? ? ? ? ? ? 1.1:1 1.2:1 1.9:1 trise, tfall 10% to 90% rf and 90% to 10% rf ns ? 2 ? ton, toff 50% control to 90% rf, and 50% control to 10% rf ns ? 4 ? transients in-band mv ? 10 ? input p1db above 500 mhz, 0 to -5 v 100 mhz, 0 to -5 v above 500 mhz, 0 to -8 v 100 mhz, 0 to -8 v dbm ? ? ? ? +27 +21 +33 +26 ? ? ? ? ip2 two tone, +5 dbm/tone, 5 mhz spacing above 500 mhz 100 mhz dbm ? ? +68 +62 ? ? iip3 two tone, +5 dbm/tone, 5 mhz spacing above 500 mhz 100 mhz dbm ? ? +46 +40 ? ? control voltage (complementary logic) v in low, 0 to -0.2 v v in high, -5 v v in high, -8 v a ? ? ? ? ? ? 20 50 300 3. all specifications apply with 50-ohm impedance connec ted to all rf ports, 0 and ?8 vdc control voltages. 4. loss changes 0.0025 db/c (from ?55c to +85c). handling procedures please observe the following precautions to avoid damage: static sensitivity gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these devices. truth table 5 control inputs condition of switch rf common to each rf port a b rf1 rf2 v in hi v in low on off v in low v in hi off on 5. v in low = 0 to -0.2 v, v in high = -5 to -8 v.
gaas spdt switch dc - 6.0 ghz rev. v6 masw6010g 3 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. isolation vswr typical performance curves insertion loss 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0123456 +85c +25c -55c frequency (ghz) 20 30 40 50 60 70 80 0123456 frequency (ghz) 1.0 1.2 1.4 1.6 1.8 2.0 0123456 frequency (ghz)
gaas spdt switch dc - 6.0 ghz rev. v6 masw6010g 4 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. handling procedures permanent damage to the masw6010g may occur if the following precautions are not adhered to: a. cleanliness - the masw6010g should be handled in a clean environment. do not attempt to clean assembly after the masw6010g is installed. b. static sensitivity - all die handling equipment and personnel should be dc grounded. c. transients - avoid instrument and power supply transients while bias is connected to the masw6010g. use shielded signal and bias cables to minimize inductive pick-up. d. bias - apply voltage to either control port a/b or only when the other is grounded. neither port should be allowed to ?float?. e. general handling - it is recommended that the masw6010g chip be handled along the long side of the die with a sharp pair of bent tweezers. do not touch the surface of the chip with fingers or tweezers. mounting the masw6010g is back-metalized with pd/ni/au (100/1,000/30,000?) metallization. it can be die-mounted using au/sn eutectic preforms or a thermally conductive epoxy. the package surface should be clean and flat before attachment. eutectic die attach: a. an 80/20 au/sn preform is recommended with a work surface temperature of approximately 255c and a tool temperature of 265c. when hot 90/10 nitrogen/hydrogen gas is applied, solder temperature should be approximately 290c. b. do not expose the masw6010g to a temperature greater than 320c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: a. electrically conductive epoxy must be used. b. apply a minimum amount of epoxy and place the masw6010g into position. a thin epoxy fillet should be visible around the perimeter of the die. c. cure epoxy per manufacturer?s recommended schedule. wire bonding a. ball or wedge bond with 1.0 mil diameter pure gold wire. thermosonic wire bonding with a nominal stage temperature of 150c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. ultrasonic energy and time should be adjusted to the minimum levels to achieve reliable wirebonds. b. wirebonds should be started on the chip and terminated on the package.
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